Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films

Bai, Yunhe1; Li, Yuanzhao1; Luan, Jianli1; Liu, Ruixuan1; Song, Wenyu1; Chen, Yang1; Ji, Peng-Fei1; Zhang, Qinghua7; Meng, Fanqi6; Tong, Bingbing3; Li, Lin3; Jiang, Yuying1; Gao, Zongwei3; Gu, Lin6; Zhang, Jinsong1,2,5; Wang, Yayu1,2,5; Xue, Qi-Kun1,2,3,4; He, Ke1,2,3,5; Feng, Yang3; Feng, Xiao1,2,3,5

2023-07-01

10.1093/nsr/nwad189

NATIONAL SCIENCE REVIEW   影响因子和分区

2095-5138

2053-714X

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to the high-temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.

intrinsic magnetic topological insulator quantized anomalous Hall resistivity molecular beam epitaxy quantized transport property

SCI

英语

其他

National Natural Science Foundation of China["92065206","11904053"] ; National Key Research and Development Program of China["2018YFA0307100","2017YFA0303303"] ; Innovation Program for Quan-tum Science and Technology[2021ZD0302502]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:001118662600001

OXFORD UNIV PRESS

2-s2.0-85183698312

Web of Science

1.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
2.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
3.Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China
5.Hefei Natl Lab, Hefei 230088, Peoples R China
6.Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
7.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Bai, Yunhe,Li, Yuanzhao,Luan, Jianli,et al. Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films[J]. NATIONAL SCIENCE REVIEW,2023,11(2).

Bai, Yunhe.,Li, Yuanzhao.,Luan, Jianli.,Liu, Ruixuan.,Song, Wenyu.,...&Feng, Xiao.(2023).Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films.NATIONAL SCIENCE REVIEW,11(2).

Bai, Yunhe,et al."Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films".NATIONAL SCIENCE REVIEW 11.2(2023).