| 题名 | Novel Wideband Millimeter-wave GaN Power Amplifier Design using Transistors with Large Drain Capacitance and High Optimum Load Impedance |
| 作者 | |
| 通讯作者 | Xiaohu Fang |
| 发表日期 | 2023
|
| DOI | |
| 发表期刊 | |
| ISSN | 1549-7747
|
| 卷号 | PP期号:99页码:1-1 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| EI入藏号 | 20232814386777
|
| EI主题词 | Bias Voltage
; Broadband Amplifiers
; Capacitance
; Efficiency
; Gallium Nitride
; Harmonic Analysis
; III-V Semiconductors
; Light Amplifiers
; Millimeter Waves
; Monolithic Microwave Integrated Circuits
; Q Factor Measurement
; Silicon Carbide
|
| EI分类号 | Electricity: Basic Concepts And Phenomena:701.1
; Electromagnetic Waves:711
; Semiconducting Materials:712.1
; Electronic Circuits:713
; Amplifiers:713.1
; Semiconductor Devices And Integrated Circuits:714.2
; Inorganic Compounds:804.2
; Production Engineering:913.1
; Numerical Methods:921.6
; Electric Variables Measurements:942.2
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | IEEE
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10171216 |
| 引用统计 |
被引频次[WOS]：2
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://kc.sustech.edu.cn/handle/2SGJ60CL/549240 |
| 专题 | 南方科技大学 |
| 作者单位 | 1.School of Micro-electronics, Southern University of Science and Technology, Shenzhen, China 2.School of Electronic and Communication Engineering, Sun Yat-sen University, Shenzhen Campus, Shenzhen, China 3.Department of Electronic Engineering, Chinese University of Hong Kong, Hong Kong, Hong Kong |
| 第一作者单位 | 南方科技大学 |
| 通讯作者单位 | 南方科技大学 |
| 第一作者的第一单位 | 南方科技大学 |
| 推荐引用方式 GB/T 7714 |
Jie Shi,Xiaohu Fang,Hao Yu,et al. Novel Wideband Millimeter-wave GaN Power Amplifier Design using Transistors with Large Drain Capacitance and High Optimum Load Impedance[J]. IEEE Transactions on Circuits and Systems II: Express Briefs,2023,PP(99):1-1.
|
| APA |
Jie Shi,Xiaohu Fang,Hao Yu,Jiangwei Sui,&Kwok-Keung M. Cheng.(2023).Novel Wideband Millimeter-wave GaN Power Amplifier Design using Transistors with Large Drain Capacitance and High Optimum Load Impedance.IEEE Transactions on Circuits and Systems II: Express Briefs,PP(99),1-1.
|
| MLA |
Jie Shi,et al."Novel Wideband Millimeter-wave GaN Power Amplifier Design using Transistors with Large Drain Capacitance and High Optimum Load Impedance".IEEE Transactions on Circuits and Systems II: Express Briefs PP.99(2023):1-1.
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| 条目包含的文件 | 条目无相关文件。 | |||||
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