| 题名 | Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal |
| 作者 | Cai, Yongqing1,2 ; Wang, Jianfeng3,4 ; Wang, Yuan1,2 ; Hao, Zhanyang1,2 ; Liu, Yixuan1,2 ; Zhou, Liang1,2 ; Sui, Xuelei4; Jiang, Zhicheng5,6; Xu, Shengjie3; Ge, Han1,2 ; Ma, Xiao-Ming1,2 ; Zhang, Chengcheng1,2 ; Shen, Zecheng1,2; Yang, Yichen5,6; Jiang, Qi5,6; Liu, Zhengtai5,6; Ye, Mao5,6; Shen, Dawei5,6; Liu, Yi7; Cui, Shengtao7; Wang, Le1,2 ; Liu, Cai1,2 ; Lin, Junhao1,2 ; Huang, Bing1,4; Wu, Liusuo1,2 ; Zhuang, Jincheng3; He, Hongtao1,2 ; Zhang, Wenqing1,2 ; Mei, Jia-Wei1,2![]() ; Chen, Chaoyu1,2![]()
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| 通讯作者 | Wang, Jianfeng; Mei, Jia-Wei; Chen, Chaoyu |
| 共同第一作者 | Cai, Yongqing; Wang, Jianfeng; Wang, Yuan; Hao, Zhanyang; Liu, Yixuan |
| 发表日期 | 2023-04-01
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| DOI | |
| 发表期刊 | |
| ISSN | 2199-160X
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| 卷号 | 9期号:7 |
| 摘要 | Lorentz-violating type-II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel state of matter. While being studied extensively in theory, convincing experimental evidence of type-II DNLSs remain elusive. Recently, vanadium-based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. This work studies the low-energy band structure of double-kagome-layered CsV8Sb12 and identifies it as a scarce type-II DNLS protected by mirror symmetry. This work observes multiple DNLs consisting of type-II Dirac cones close to or almost at the Fermi level via angle-resolved photoemission spectroscopy (ARPES), which provides an electronic explanation for the nonsaturating magnetoresistance effect as observed. First-principles theory analyses show that spin-orbit coupling only opens a small gap, resulting in effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type-II DNLs, together with the interaction between a low-energy van Hove singularity and quasi-one-dimensional band as observed in the same material, suggest CsV8Sb12 as an ideal platform for exploring novel transport properties. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 共同第一
; 通讯
|
| 资助项目 | National Key R&D Program of China[2022YFA1403700]
; National Natural Science Foundation of China[
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| WOS研究方向 | Science & Technology - Other Topics
; Materials Science
; Physics
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| WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
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| WOS记录号 | WOS:000976020300001
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| 出版者 | |
| EI入藏号 | 20231814041202
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| EI主题词 | Antimony Compounds
; Band Structure
; Fruits
; Photoelectron Spectroscopy
|
| EI分类号 | Magnetism: Basic Concepts And Phenomena:701.2
; Agricultural Products:821.4
; Solid State Physics:933
|
| 来源库 | Web of Science
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| 引用统计 |
被引频次[WOS]:1
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://kc.sustech.edu.cn/handle/2SGJ60CL/536127 |
| 专题 | 量子科学与工程研究院 理学院_物理系 |
| 作者单位 | 1.Southern Univ Sci & Technol SUSTech, Shenzhen Inst Quantum Sci & Engn SIQSE, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China 3.Beihang Univ, Sch Phys, Beijing 100191, Peoples R China 4.Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China 5.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 6.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ctr Excellence Superconducting Elect, Shanghai 200050, Peoples R China 7.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China |
| 第一作者单位 | 量子科学与工程研究院; 物理系 |
| 通讯作者单位 | 量子科学与工程研究院; 物理系 |
| 第一作者的第一单位 | 量子科学与工程研究院 |
| 推荐引用方式 GB/T 7714 |
Cai, Yongqing,Wang, Jianfeng,Wang, Yuan,et al. Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal[J]. ADVANCED ELECTRONIC MATERIALS,2023,9(7).
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| APA |
Cai, Yongqing.,Wang, Jianfeng.,Wang, Yuan.,Hao, Zhanyang.,Liu, Yixuan.,...&Chen, Chaoyu.(2023).Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal.ADVANCED ELECTRONIC MATERIALS,9(7).
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| MLA |
Cai, Yongqing,et al."Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal".ADVANCED ELECTRONIC MATERIALS 9.7(2023).
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| Cai 等 - Type-II Dira(6405KB) | -- | -- | 限制开放 | -- | ||
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