Review of a direct epitaxial approach to achieving micro–LEDs

Yuefei,Cai1; Jie,Bai2; Tao,Wang2

2022-09-09

10.1088/1674-1056/ac90b5

Chinese Physics B   影响因子和分区

1674-1056

2058-3834

There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (mu LEDs) with a dimension of <= 5 mu m are the key elements. Typically, mu LEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is <= 10 mu m. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achieving mu LEDs, where the dry-etching technologies for the formation of mu LED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.

micro-LED epitaxial growth gallium nitride display

SCI ; EI

英语

第一 ; 通讯

null[EP/P006973/1] ; null[EP/T013001/1] ; null[EP/M015181/1]

Physics

Physics, Multidisciplinary

WOS:000906580000001

IOP Publishing

20230213381553

Augmented reality ; Dry etching ; Epitaxial growth ; Gallium nitride ; III-V semiconductors ; Virtual reality

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Software, Data Handling and Applications:723 ; Chemical Reactions:802.2 ; Chemical Operations:802.3 ; Crystal Growth:933.1.2

人工提交

1.Southern University of Science and Technology
2.University of Sheffield

Yuefei,Cai,Jie,Bai,Tao,Wang. Review of a direct epitaxial approach to achieving micro–LEDs[J]. Chinese Physics B,2022,32(1).

Yuefei,Cai,Jie,Bai,&Tao,Wang.(2022).Review of a direct epitaxial approach to achieving micro–LEDs.Chinese Physics B,32(1).

Yuefei,Cai,et al."Review of a direct epitaxial approach to achieving micro–LEDs".Chinese Physics B 32.1(2022).