Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (Delta C) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectric layer or at the SiNX/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (V-th) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiNX gate dielectric layer or at the SiNX/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on Delta C measurement. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).