EM-Driven Design of Recurrent Slow-Wave Structures

Kurgan, Piotr1,2; Koziel, Slawomir1,2; Cheng, Qingsha S.3

10.1109/NEMO.2017.7964236

2017

978-1-5090-4838-0

2017 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION FOR RF, MICROWAVE, AND TERAHERTZ APPLICATIONS (NEMO)

209-211

17-19 May 2017

Seville, Spain

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

This work addresses the problem of simultaneous determination of circuit topology and geometry parameter values of recurrent slow-wave structures. Here, the considered slow-wave structures are specifically meant for use as building blocks of two-section branch-line couplers, whose size and bandwidth depend on the aforementioned parameters. The proposed design strategy exploits data-driven models of the coupler components as well as surrogate-assisted techniques to accelerate the geometry optimization process. It allows for obtaining the smallest coupler for a given bandwidth without the necessity of executing multiple optimization routines at the level of the entire EM model of the coupler circuit.

Integrated inductors electromagnetic simulation EM-driven design multi-objective optimization size reduction

其他

英语

CPCI-S ; EI

National Natural Science Foundation of China[61471258]

Engineering ; Telecommunications

Engineering, Electrical & Electronic ; Telecommunications

WOS:000424193800070

20173604109828

Bandwidth ; Directional couplers ; Electromagnetic simulation ; Multiobjective optimization ; Structural design

Structural Design, General:408.1 ; Waveguides:714.3 ; Information Theory and Signal Processing:716.1 ; Optimization Techniques:921.5

Web of Science

1.Reykjavik Univ, Engn Optimizat & Modeling Ctr, IS-101 Reykjavik, Iceland
2.Gdansk Univ Technol, Fac Elect Telecommun & Informat, Gdansk, Poland
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China

Kurgan, Piotr,Koziel, Slawomir,Cheng, Qingsha S.. EM-Driven Design of Recurrent Slow-Wave Structures[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2017:209-211.