Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

Cheng，Wei Chih1,2; Zeng，Fanming1,3,4,5; He，Minghao1,6; Wang，Qing1,3,4,5; Chan，Mansun2; Yu，Hongyu1,3,4,5

2020

10.1109/JEDS.2020.3020186

IEEE Journal of the Electron Devices Society   影响因子和分区

2168-6734

High electron mobility transistor (HEMT) gallium nitride (GaN) strain engineering

SCI ; EI

第一 ; 通讯

20204609485929

Two dimensional electron gas ; Gallium nitride ; III-V semiconductors ; Silicon nitride ; Threshold voltage ; Electric fields ; Aluminum gallium nitride ; Density of gases

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Physical Properties of Gases, Liquids and Solids:931.2

IEEE

1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,China
2.Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Hong Kong,Hong Kong
3.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Shenzhen,518055,China
4.Shenzhen Institute of Wide-Bandgap Semiconductors,Shenzhen,518100,China
5.Key Laboratory of the Third Generation Semi-conductor,Southern University of Science and Technology,Shenzhen,518055,China
6.Department of Electrical and Computer Engineering,National University of Singapore,Singapore,117583,Singapore

Cheng，Wei Chih,Zeng，Fanming,He，Minghao,et al. Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications[J]. IEEE Journal of the Electron Devices Society,2020,8:1138-1144.

Cheng，Wei Chih,Zeng，Fanming,He，Minghao,Wang，Qing,Chan，Mansun,&Yu，Hongyu.(2020).Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications.IEEE Journal of the Electron Devices Society,8,1138-1144.

Cheng，Wei Chih,et al."Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications".IEEE Journal of the Electron Devices Society 8(2020):1138-1144.