Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEIMTs

Cheng, Wei-Chih1,2; Fang, Tao1; Lei, Siqi1; Zhao, Yunlong3; He, Minghao1; Chan, Mansun2; (Maggie) Xia, Guangrui3; Zhao, Feng4; Yu, Hongyu1,5,6

2019

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

Due to the piezoelectric nature of GaN, the two-dimensional electron gas (2DEG) in AIGaN/GaN high electron mobility transistor (HENIT) could be engineered by strain. In this work, SiNx deposited using dual-frequency plasma enhanced chemical vapor deposition (PECVD) was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the strain effect. However, the threshold voltage was increased by the liner-induced strain, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs.

Gallium nitride (GaA) High electron mobility transistor (HEMT) Strain engineering

第一 ; 通讯

英语

CPCI-S

[JCYJ20170412153356899]

Computer Science

Computer Science, Hardware & Architecture ; Computer Science, Theory & Methods

WOS:000483036000153

Web of Science

1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen, Guangdong, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
3.Univ British Columbia, Dept Mat Engn, Vancouver, BC, Canada
4.Washington State Univ, Sch Engn & Comp Sci, Vancouver, WA USA
5.Shenzhen Key Lab Third Generat Semicond, Shenzhen, Guangdong, Peoples R China
6.GaN Device Engn Technol Res Ctr Guangdong, Shenzhen, Guangdong, Peoples R China

Cheng, Wei-Chih,Fang, Tao,Lei, Siqi,et al. Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEIMTs[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2019.