Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates

Zhou, Guangnan1; Wan, Zeyu1,2,3,4; Yang, Gaiying5; Jiang, Yang1; Sokolovskij, Robert1,2,3,4; Yu, Hongyu1,2,3,4; Xia, Guangrui1,2,3,4

2020-03

10.1109/TED.2020.2968596

IEEE Transactions on Electron Devices   影响因子和分区

1557-9646

Gate Breakdown Gate Leakage Graphene P-gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)

SCI ; EI

英语

第一 ; 通讯

20201008273092

Graphene ; III-V Semiconductors ; Electric Breakdown ; Titanium Compounds ; Electron Mobility ; Gallium Nitride ; Schottky Barrier Diodes

Electricity: Basic Concepts And Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Products Generally:804

ENGINEERING

IEEE

1.School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China
2.Department of Materials Engineering, University of British Columbia (UBC), Vancouver; BC; V6T1Z4, Canada
3.GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China
4.Key Laboratory of the Third Generation Semiconductors, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China
5.School of Innovation and Entrepreneurship, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China

Zhou, Guangnan,Wan, Zeyu,Yang, Gaiying,et al. Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates[J]. IEEE Transactions on Electron Devices,2020,67(3):875-880.

Zhou, Guangnan.,Wan, Zeyu.,Yang, Gaiying.,Jiang, Yang.,Sokolovskij, Robert.,...&Xia, Guangrui.(2020).Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates.IEEE Transactions on Electron Devices,67(3),875-880.

Zhou, Guangnan,et al."Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates".IEEE Transactions on Electron Devices 67.3(2020):875-880.